document number: 93754 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-nov-09 1 passivated assembled circuit elements, 25 a P100 series vishay high power products features ? glass passivated junction s for greater reliability ? electrically isolated base plate ? available up to 1200 v rrm /v drm ? high dynamic characteristics ? wide choice of circuit configurations ? simplified mechanical design and assembly ? ul e78996 approved ? compliant to rohs directive 2002/95/ec description the P100 series of integrated power circuits consists of power thyristors and power diodes configured in a single package. with its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. applications include power su pplies, control circuits and battery chargers. electrical specifications product summary i o 25 a pace-pak (d-19) major ratings and characteristics symbol characteristics values units i o 85 c 25 a i tsm , i fsm 50 hz 357 a 60 hz 375 i 2 t 50 hz 637 a 2 s 60 hz 580 i 2 t 6365 a 2 s v rrm range 400 to 1200 v v isol 2500 v t j - 40 to 125 c t stg voltage ratings type number v rrm /v drm , maximum repetitive peak reverse and peak off-state voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j maximum ma p101, p121, p131 400 500 10 p102, p122, p132 600 700 p103, p123, p133 800 900 p104, p124, p134 1000 1100 p105, p125, p135 1200 1300
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93754 2 revision: 04-nov-09 P100 series vishay high power products passivated assembled circuit elements, 25 a on-state conduction parameter symbol test conditions values units maximum dc output current at case temperature i o full bridge 25 a 85 c maximum peak, one-cycle non-repetitive on-state or forward current i tsm , i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 357 a t = 8.3 ms 375 t = 10 ms 100 % v rrm reapplied 300 t = 8.3 ms 315 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 637 a 2 s t = 8.3 ms 580 t = 10 ms 100 % v rrm reapplied 450 t = 8.3 ms 410 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied i 2 t for time tx = i 2 t tx 6365 a 2 s maximum value of threshold voltage v t(to) t j = 125 c 0.82 v maximum level value of on-state slope resistance r t1 t j = 125 c, average power = v t(to) x i t(av) + r t + (i t(rms) ) 2 12 m maximum on-state voltage drop v tm i tm = x i t(av) t j = 25 c 1.35 v maximum forward voltage drop v fm i fm = x i f(av) maximum non-repeti tive rate of rise of turned-on current di/dt t j = 125 c from 0.67 v drm i tm = x i t(av) , i g = 500 ma, t r < 0.5 s, t p > 6 s 200 a/s maximum holding current i h t j = 25 c anode supply = 6 v, resistive load, gate open 130 ma maximum latching current i l t j = 25 c anode supply = 6 v, resistive load 250 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 125 c, exponential to 0.67 v drm gate open 200 v/s maximum peak reverse and off-state leakage current at v rrm , v drm i rrm , i drm t j = 125 c, gate open circuit 10 ma maximum peak reverse leakage current i rrm t j = 25 c 100 a rms isolation voltage v isol 50 hz, circuit to base, all terminals shorted, t j = 25 c, t = 1 s 2500 v
document number: 93754 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-nov-09 3 P100 series passivated assembled circuit elements, 25 a vishay high power products note (1) a mounting compund is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the com pound note (1) to complete code refer to voltage ratings table, i.e.: for 600 v p10.w complete code is p102w triggering parameter symbol test conditions values units maximum peak gate power p gm 8 w maximum average gate power p g(av) 2 maximum peak gate current i gm 2a maximum peak negati ve gate voltage -v gm 10 v maximum gate voltage required to trigger v gt t j = - 40 c anode supply = 6 v resistive load 3 v t j = 25 c 2 t j = 125 c 1 maximum gate current required to trigger i gt t j = - 40 c 90 ma t j = 25 c 60 t j = 125 c 35 maximum gate voltage th at will not trigger v gd t j = 125 c, rated v drm applied 0.2 v maximum gate current th at will not trigger i gd 2ma thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to ca se per junction r thjc dc operation 2.24 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.10 mounting torque, ba se to heatsink (1) 4nm approximate weight 58 g 2.0 oz. circuit type and coding (1) circuit 0 circuit 2 circuit 3 terminal positions schematic diagram single phase hybrid bridge common cathode single phase hybrid bridge doubler single phase all scr bridge basic series p10. p12. p13. with voltage suppression p10.k p12.k p13.k with freewheeling diode p10.w - - with both voltag e suppression and freewheeling diode p10.kw - - ac1 g 1- ac2 g 2+ ac1 g 1- ac2 g 2+ ac2 g 2- ac1 g 3 g 1 g 4 + g 1 ac2 ac1 g 2 (-) (+) g 2 g 1 ac1 ac2 (-) (+) g 1 g 3 ac2 ac1 (-) (+) g 2 g 4
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93754 4 revision: 04-nov-09 P100 series vishay high power products passivated assembled circuit elements, 25 a fig. 1 - current ratings nomogram (1 module per heatsink) fig. 2 - on-state power loss characteristics fig. 3 - on-state power loss characteristics fig. 4 - current ratings characteristics fig. 5 - on-state volt age drop characteristics maximum total power loss (w) total output current (a) 5101520 25 0 0 60 50 40 30 20 10 93754_01a ~ + - 180 ( s ine) t j = 125 c maximum total power loss (w) maximum allowa b le am b ient temperature (c) 25 75 50 100 125 0 60 50 40 30 20 10 0 93754_01b r th s a = 15 k/w - r 2 k/w 3 k/w 7 k/w 10 k/w 5 k/w maximum average on- s tate power loss (w) average on- s tate current (a) 10 15 05 15 10 5 0 93754_02 180 120 90 60 30 rm s limit ? conduction angle t j = 125 c per junction maximum average on- s tate power loss (w) average on- s tate current (a) 20 01015 5 20 10 15 5 0 93754_03 dc 180 120 90 60 30 rm s limit t j = 125 c per junction conduction period ? maximum allowa b le case temperature (c) total output current (a) 10 20 51525 30 0 70 80 90 100 110 120 130 93754_04 180 ( s ine) 180 (rect.) fully turned-on per module instantaneous on- s tate current (a) instantaneous on- s tate voltage (v) 0123456 1 100 10 1000 93754_05 t j = 25 c t j = 125 c per junction
document number: 93754 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-nov-09 5 P100 series passivated assembled circuit elements, 25 a vishay high power products fig. 6 - maximum non-re petitive surge current fig. 7 - maximum non-re petitive surge current fig. 8 - thermal impedance z thjc characteristics fig. 9 - gate characteristics peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 10 100 1 150 200 300 250 350 93754_06 per junction at any rated load condition and with rated v rrm applied following s urge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 0.01 100 150 200 250 300 350 400 93754_07 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. initial t j = 125 c no voltage reapplied rated v rrm reapplied per junction 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 10 1 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 93754_08 per junction s teady s tate value r thjc = 2.24 k/w (dc operation) 0.1 1 10 100 0.001 93754_09 instantaneous g ate current (a) instantaneous g ate voltage (v) 0.01 0.1 1 10 100 (1) (2) (3) (4) (1) p g m = 10 w, t p = 5 m s (2) p g m = 20 w, t p = 25 m s (3) p g m = 50 w, t p = 1 m s (4) p g m = 100 w, t p = 500 s fre q uency limited by p g (av) (b) (a) t j = 25 c t j = 125 c t j = 40 c v g d i g d rectangular gate pul s e (a) recommended load line for rated di/dt: 10 v, 20 , t r 1 s (b) recommended load line for rated di/dt: 10 v, 65 , t r 1 s links to related documents dimensions www.vishay.com/doc?95335
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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